PART |
Description |
Maker |
LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位)的SRAM 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC322271J LC322271T-80 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write 2迈可31072字16位),内存快速页面模式,字节
|
Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
|
LC3564S LC3564SM LC3564SS LC3564ST-10 LC3564ST-70 |
64K (8192 words x 8 bits) SRAM 64K的(8192字8位)SRAM
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M510 |
1048576位(131072 - Word-8-bit)的CMOS static RAM 1048576位(131072 - Word8位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits 512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC Nel Frequency Controls,inc
|
LC36256AML-10W LC36256AML-85W LC36256AML-70W LC362 |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
LC36256AML-85 LC36256AML-12 LC36256AML-70 |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
LC36256AL LC36256AL-10 LC36256AL-12 LC36256AL-70 L |
256 K (32768 words x 8 bits) SRAM 256度(32768字8位)的SRAM
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
LC35V256ET-70W LC35V256EM LC35V256EM-70W |
256K (32K words x 8 bits) SRAM Control pins: OE and CE 256K2K字8位)的SRAM控制引脚:OE和行政长
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|